{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002875","patent":{"patent_number":"US-12002875","title":"Semiconductor devices and methods of manufacture","assignee":null,"inventors":[],"filing_date":"2022-12-19T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"Semiconductor devices and methods of forming semiconductor devices are described herein. A method includes forming a first fin and a second fin in a substrate. A low concentration source/drain region is epitaxially grown over the first fin and over the second fin. The material of the low concentration region has less than 50% by volume of germanium. A high concentration contact landing region is formed over the low concentration regions. The material of the high concentration contact landing region has at least 50% by volume germanium. The high concentration contact landing region has a thickness of at least 1 nm over a top surface of the low concentration source/drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices and methods of manufacture","description":"Semiconductor devices and methods of forming semiconductor devices are described herein. A method includes forming a first fin and a second fin in a substrate. A low concentration source/drain region ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002875","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002875","citation_suggestion":"Patentable. \"Semiconductor devices and methods of manufacture\" (US-12002875). https://patentable.app/patents/US-12002875","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002875","json":"https://patentable.app/api/llm-context/US-12002875","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:32:57.970Z"}