{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002880","patent":{"patent_number":"US-12002880","title":"Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor","assignee":null,"inventors":[],"filing_date":"2021-07-14T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":17,"abstract":"There is provided a method for manufacturing a nitride-based high electron mobility transistor, including: providing a conductive member on a nitride semiconductor crystal substrate, outside an element region in a plan view; forming a mask on the substrate, the mask having an opening in at least one of a source recess etching region and a drain recess etching region; performing photoelectrochemical etching by irradiating the substrate with light to form at least one of a source recess and a drain recess, in a state where the substrate on which the conductive member is provided and the mask is formed is in contact with an etching solution containing an oxidizing agent that receives electrons; and forming an element separation structure of the high electron mobility transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor","description":"There is provided a method for manufacturing a nitride-based high electron mobility transistor, including: providing a conductive member on a nitride semiconductor crystal substrate, outside an elemen","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002880","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002880","citation_suggestion":"Patentable. \"Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor\" (US-12002880). https://patentable.app/patents/US-12002880","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002880","json":"https://patentable.app/api/llm-context/US-12002880","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:35:51.272Z"}