{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002881","patent":{"patent_number":"US-12002881","title":"Heterostructure for a high electron mobility transistor and a method of producing the same","assignee":null,"inventors":[],"filing_date":"2017-07-20T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"The present document discloses a heterostructure for a high electron mobility transistor (HEMT). The heterostructure comprises a SiC substrate, an InxAlyGa1-x-yN nucleation layer (12), wherein x=0-1, y=0-1, preferably x<0.05 and y>0.50, more preferably x<0.03 and y>0.70 and most preferably x<0.01 and y>0.90, formed on the SiC substrate. The heterostructure further comprises a GaN channel layer formed on the InxAlyGa1-x-yN nucleation layer. A thickness of the GaN channel layer is 50 to 500 nm, preferably 100 to 450 nm, most preferably 150 to 400 nm. The GaN channel layer presents a rocking curve with a (002) peak having a FMHW below 300 arcsec, and a rocking curve with a (102) peak having a FMHW below 400 arcsec as determined by X-ray diffraction, XRD. A surface of an uppermost layer of the heterostructure (1) exhibits an atomic step-flow morphology with rms roughness over a 10 μm2 scan area of below 1.8 nm, preferably below 1.4 nm, most preferably below 1 nm, over a 3 μm2 scan area of below 1 nm, preferably below 0.7 nm, most preferably below 0.4 nm, as determined by atomic force microscopy, AFM."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Heterostructure for a high electron mobility transistor and a method of producing the same","description":"The present document discloses a heterostructure for a high electron mobility transistor (HEMT). The heterostructure comprises a SiC substrate, an InxAlyGa1-x-yN nucleation layer (12), wherein x=0-1, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002881","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002881","citation_suggestion":"Patentable. \"Heterostructure for a high electron mobility transistor and a method of producing the same\" (US-12002881). https://patentable.app/patents/US-12002881","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002881","json":"https://patentable.app/api/llm-context/US-12002881","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:37:16.974Z"}