{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002903","patent":{"patent_number":"US-12002903","title":"Group-III nitride laminated substrate and semiconductor element","assignee":null,"inventors":[],"filing_date":"2020-11-19T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Provided is a technology capable of improving the quality of a GaN layer that is formed on an underlying substrate. A group III-nitride laminated substrate includes an underlying substrate, a first layer that is formed on the underlying substrate and is made of aluminum nitride, and a second layer that is formed on the first layer and is made of gallium nitride. The second layer has a thickness of 10 μm or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Group-III nitride laminated substrate and semiconductor element","description":"Provided is a technology capable of improving the quality of a GaN layer that is formed on an underlying substrate. A group III-nitride laminated substrate includes an underlying substrate, a first la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002903","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002903","citation_suggestion":"Patentable. \"Group-III nitride laminated substrate and semiconductor element\" (US-12002903). https://patentable.app/patents/US-12002903","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002903","json":"https://patentable.app/api/llm-context/US-12002903","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:43:22.194Z"}