{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12004345","patent":{"patent_number":"US-12004345","title":"Semiconductor with extended life time flash memory and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2021-11-30T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":5,"abstract":"A semiconductor with 3D flash memory storing cells giving an extended life time includes a stack structure in each storing cell, a receiving space crossing through the stack structure, a blocking layer, at least one floating gate layer, and a channel layer. The stack structure includes at least one control gate layer, at least two dielectric layers, and at least one erasing layer. The receiving space comprises a first receiving portion communicating with several second receiving portions. The first receiving portion crosses through the stack structure and the second receiving portions are coplanar with the control gate layer. The blocking layer insulates the floating gate layer from the control gate layers. The erasing layer and floating gate layer form a passageway for electrons when data erasure is required in the semiconductor. A method for fabricating the semiconductor is also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor with extended life time flash memory and fabrication method thereof","description":"A semiconductor with 3D flash memory storing cells giving an extended life time includes a stack structure in each storing cell, a receiving space crossing through the stack structure, a blocking laye","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12004345","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12004345","citation_suggestion":"Patentable. \"Semiconductor with extended life time flash memory and fabrication method thereof\" (US-12004345). https://patentable.app/patents/US-12004345","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12004345","json":"https://patentable.app/api/llm-context/US-12004345","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:47:37.128Z"}