{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12008302","patent":{"patent_number":"US-12008302","title":"Integrated circuit with thicker metal lines on lower metallization layer","assignee":null,"inventors":[],"filing_date":"2023-02-23T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["G06F","H01L","G06F","G06F","G06F","H01L","H01L","G06F","G06F","G06F"],"num_claims":20,"abstract":"An IC structure includes first, second, third, and fourth transistors on a substrate, a first net and a second net. The first net includes a plurality of first metal lines routed on a first metallization layer, and a plurality of first metal vias electrically connecting the plurality of first metal lines to the first and second transistors. The second net includes a plurality of second metal lines routed on a second metallization layer, and a plurality of second metal vias electrically connecting the plurality of second metal lines to the third and fourth transistors. A count of the first metal vias of the first net is less than a count of the second metal vias of the second net, and a line height of the first metal line of the first net is greater than a line height of the second metal line of the second net."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuit with thicker metal lines on lower metallization layer","description":"An IC structure includes first, second, third, and fourth transistors on a substrate, a first net and a second net. The first net includes a plurality of first metal lines routed on a first metallizat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12008302","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12008302","citation_suggestion":"Patentable. \"Integrated circuit with thicker metal lines on lower metallization layer\" (US-12008302). https://patentable.app/patents/US-12008302","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12008302","json":"https://patentable.app/api/llm-context/US-12008302","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T20:29:43.390Z"}