{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009020","patent":{"patent_number":"US-12009020","title":"Memory device generating optimal write voltage based on size of memory cell and initial write voltage","assignee":null,"inventors":[],"filing_date":"2022-03-29T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A memory device includes; a memory cell array including a first memory cell region and a second memory cell region, a voltage generator configured to generate a code corresponding to a write voltage, and a write driver configured to store data in the first memory cell region in response to the code. The second memory cell region stores a value defining the write voltage, and the write voltage is determined in relation to a reference resistance distinguishing a parallel state and an anti-parallel state for the memory cells, and further in relation to an initial write voltage applied to a magnetic tunnel junction element of at least one of the memory cells."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device generating optimal write voltage based on size of memory cell and initial write voltage","description":"A memory device includes; a memory cell array including a first memory cell region and a second memory cell region, a voltage generator configured to generate a code corresponding to a write voltage, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009020","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009020","citation_suggestion":"Patentable. \"Memory device generating optimal write voltage based on size of memory cell and initial write voltage\" (US-12009020). https://patentable.app/patents/US-12009020","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009020","json":"https://patentable.app/api/llm-context/US-12009020","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:38:12.860Z"}