{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009201","patent":{"patent_number":"US-12009201","title":"Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium","assignee":null,"inventors":[],"filing_date":"2023-03-24T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":22,"abstract":"There is provided a technique, including: (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate; (b) forming a first SiN layer having SiCl termination formed on its surface by supplying SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; (c) forming a second SiN layer having NH termination formed on its surface by supplying a second reactant containing N and H to the substrate to react the SiCl termination formed on the surface of the first SiN layer with the second reactant; and (d) forming a SiN film on the substrate by performing a cycle a predetermined number of times under a condition where the SiCl4 is not gas-phase decomposed after performing (a), the cycle including non-simultaneously performing (b) and (c)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium","description":"There is provided a technique, including: (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate; (b) forming a first SiN layer having","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009201","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009201","citation_suggestion":"Patentable. \"Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium\" (US-12009201). https://patentable.app/patents/US-12009201","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009201","json":"https://patentable.app/api/llm-context/US-12009201","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:14:56.321Z"}