{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009223","patent":{"patent_number":"US-12009223","title":"Semiconductor structure and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2021-08-18T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method for manufacturing a semiconductor structure includes: a substrate with a groove structure formed therein is provided; a laminated structure is formed on the substrate, which includes a first conductive material layer, a second conductive material layer and an insulating material layer from bottom up, and the first conductive material layer fills the groove structure and covers the surface of the substrate; the insulating material layer, the second conductive material layer and the first conductive material layer are sequentially etched to form a bit line structure, in which a process of etching the first conductive material layer includes a first etching stage and a second etching stage, such that a bottom width of the first pattern structure located in the groove structure is not smaller than that of the first pattern structure located outside the groove structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and manufacturing method thereof","description":"A method for manufacturing a semiconductor structure includes: a substrate with a groove structure formed therein is provided; a laminated structure is formed on the substrate, which includes a first ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009223","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009223","citation_suggestion":"Patentable. \"Semiconductor structure and manufacturing method thereof\" (US-12009223). https://patentable.app/patents/US-12009223","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009223","json":"https://patentable.app/api/llm-context/US-12009223","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:24:46.509Z"}