{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009264","patent":{"patent_number":"US-12009264","title":"Adjusting work function through adjusting deposition temperature","assignee":null,"inventors":[],"filing_date":"2022-06-13T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming isolation regions extending into a semiconductor substrate, and recessing the isolation regions. After the recessing, a portion of a semiconductor material between the isolation region protrudes higher than top surfaces of the isolation regions to form a semiconductor fin. The method further includes forming a gate stack, which includes forming a gate dielectric on sidewalls and a top surface of the semiconductor fin, and depositing a titanium nitride layer over the gate dielectric as a work-function layer. The titanium nitride layer is deposited at a temperature in a range between about 300° C. and about 400° C. A source region and a drain region are formed on opposing sides of the gate stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Adjusting work function through adjusting deposition temperature","description":"A method includes forming isolation regions extending into a semiconductor substrate, and recessing the isolation regions. After the recessing, a portion of a semiconductor material between the isolat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009264","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009264","citation_suggestion":"Patentable. \"Adjusting work function through adjusting deposition temperature\" (US-12009264). https://patentable.app/patents/US-12009264","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009264","json":"https://patentable.app/api/llm-context/US-12009264","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:15:35.959Z"}