{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009288","patent":{"patent_number":"US-12009288","title":"Interconnection structure and semiconductor package including the same","assignee":null,"inventors":[],"filing_date":"2021-04-14T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Disclosed are interconnection structures and semiconductor packages. The interconnection structure includes a first dielectric layer and a first hardmask pattern that are sequentially stacked, and a first interconnection pattern that penetrates the first hardmask pattern and the first dielectric layer. The first hardmask pattern includes a dielectric material having an etch selectivity with respect to the first dielectric layer. The first interconnection pattern includes a via part, a first pad part, and a line part that are integrally connected to each other. The first pad part vertically overlaps the via part. The line part extends from the first pad part. A level of a bottom surface of the first pad part is lower than a level of a bottom surface of the line part."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Interconnection structure and semiconductor package including the same","description":"Disclosed are interconnection structures and semiconductor packages. The interconnection structure includes a first dielectric layer and a first hardmask pattern that are sequentially stacked, and a f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009288","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009288","citation_suggestion":"Patentable. \"Interconnection structure and semiconductor package including the same\" (US-12009288). https://patentable.app/patents/US-12009288","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009288","json":"https://patentable.app/api/llm-context/US-12009288","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:45:28.817Z"}