{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009326","patent":{"patent_number":"US-12009326","title":"SRAM bit cells with three-dimensional integration","assignee":null,"inventors":[],"filing_date":"2022-01-26T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"Structures for a static random access memory bit cell and methods of forming a structure for a static random access memory bit cell. The structure includes a first field-effect transistor on a first substrate and a second field-effect transistor on a second substrate. The first field-effect transistor includes a first gate, and the second field-effect transistor includes a second gate. The structure further includes a first interconnect structure on the first substrate and a second interconnect structure on the second substrate. The first interconnect structure includes a first metal feature connected to the first gate, and the first metal feature has a first surface. The second interconnect structure includes a second metal feature connected to the second gate, and the second metal feature has a second surface that is connected to the first surface of the first metal feature."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SRAM bit cells with three-dimensional integration","description":"Structures for a static random access memory bit cell and methods of forming a structure for a static random access memory bit cell. The structure includes a first field-effect transistor on a first s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009326","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009326","citation_suggestion":"Patentable. \"SRAM bit cells with three-dimensional integration\" (US-12009326). https://patentable.app/patents/US-12009326","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009326","json":"https://patentable.app/api/llm-context/US-12009326","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:34:39.269Z"}