{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009332","patent":{"patent_number":"US-12009332","title":"Semiconductor device having high yield strength intermediate plate","assignee":null,"inventors":[],"filing_date":"2016-07-28T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A semiconductor chip (3) is bonded to an upper surface of an electrode substrate (1) via a first solder (2). A lead frame (5) is bonded to an upper surface of the semiconductor chip (3) via a second solder (4). An intermediate plate (6) is provided in the first solder (2) between the electrode substrate (1) and the semiconductor chip (3). A yield strength of the intermediate plate (6) is higher than yield strengths of the electrode substrate (1) and the first solder (2) within the whole operating temperature range of the semiconductor device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having high yield strength intermediate plate","description":"A semiconductor chip (3) is bonded to an upper surface of an electrode substrate (1) via a first solder (2). A lead frame (5) is bonded to an upper surface of the semiconductor chip (3) via a second s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009332","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009332","citation_suggestion":"Patentable. \"Semiconductor device having high yield strength intermediate plate\" (US-12009332). https://patentable.app/patents/US-12009332","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009332","json":"https://patentable.app/api/llm-context/US-12009332","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:24:34.092Z"}