{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009360","patent":{"patent_number":"US-12009360","title":"Semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2021-11-10T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"An IGBT region includes: an n-type carrier accumulation layer provided to be in contact with the n−-type drift layer on the first main surface side of the n−-type drift layer and having a higher n-type impurity concentration than the n−-type drift layer, a p-type base layer provided between the n-type carrier accumulation layer and the first main surface, an n+-type emitter layer selectively provided in a surface layer portion of the p-type base layer, and a gate electrode provided to face the n+-type emitter layer and the p-type base layer with an interposition of an insulating film. A diode region includes a p-type anode layer provided between the n−-type drift layer and the first main surface and provided to a position deeper from the first main surface than a boundary between the n-type carrier accumulation layer and the n−-type drift layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing the same","description":"An IGBT region includes: an n-type carrier accumulation layer provided to be in contact with the n−-type drift layer on the first main surface side of the n−-type drift layer and having a higher n-typ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009360","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009360","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing the same\" (US-12009360). https://patentable.app/patents/US-12009360","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009360","json":"https://patentable.app/api/llm-context/US-12009360","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:18:40.498Z"}