{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009362","patent":{"patent_number":"US-12009362","title":"Method of making amphi-FET structure and method of designing","assignee":null,"inventors":[],"filing_date":"2023-07-27T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["G06F","G06F","H01L","H01L","H01L","H01L","H01L","H01L","B82Y"],"num_claims":20,"abstract":"A method of making a semiconductor device includes forming a first active region on a first side of a substrate. The method further includes forming a first source/drain (S/D) electrode surrounding a first portion of the first active region. The method further includes forming an S/D connect via extending through the substrate. The method further includes flipping the substrate. The method further includes forming a second active region on a second side of the substrate, wherein the second side of the substrate is opposite to the first side of the substrate. The method further includes forming a second S/D electrode surrounding a first portion of the second active region, wherein the S/D connect directly contacts both the first S/D electrode and the second S/D electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of making amphi-FET structure and method of designing","description":"A method of making a semiconductor device includes forming a first active region on a first side of a substrate. The method further includes forming a first source/drain (S/D) electrode surrounding a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009362","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009362","citation_suggestion":"Patentable. \"Method of making amphi-FET structure and method of designing\" (US-12009362). https://patentable.app/patents/US-12009362","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009362","json":"https://patentable.app/api/llm-context/US-12009362","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:54:44.504Z"}