{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009363","patent":{"patent_number":"US-12009363","title":"Method for forming source/drain contacts","assignee":null,"inventors":[],"filing_date":"2021-06-14T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Semiconductor devices and methods of forming the same are provided. In one embodiments, a semiconductor device includes an n-type transistor region and a p-type transistor region. The n-type transistor region includes a first gate stack, a first gate spacer over sidewalls of the first gate stack, an n-type epitaxial feature in a source/drain (S/D) region of the n-type transistor region, and a first metal silicide layer over the n-type epitaxial feature. The p-type transistor region includes a second gate stack, a second gate spacer over sidewalls of the second gate stack, a p-type epitaxial feature in an S/D region of the p-type transistor region, a dopant-containing implant layer over the p-type epitaxial feature, and a second metal silicide layer over the dopant-containing implant layer. The dopant-containing implant layer includes a metallic dopant."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming source/drain contacts","description":"Semiconductor devices and methods of forming the same are provided. In one embodiments, a semiconductor device includes an n-type transistor region and a p-type transistor region. The n-type transisto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009363","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009363","citation_suggestion":"Patentable. \"Method for forming source/drain contacts\" (US-12009363). https://patentable.app/patents/US-12009363","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009363","json":"https://patentable.app/api/llm-context/US-12009363","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:00:38.793Z"}