{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009401","patent":{"patent_number":"US-12009401","title":"Memory transistor with multiple charge storing layers and a high work function gate electrode","assignee":null,"inventors":[],"filing_date":"2022-09-26T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["B82Y","G11C","H01L","H01L","H01L"],"num_claims":20,"abstract":"An example memory device includes a channel positioned between and electrically connecting a first diffusion region and a second diffusion region, and a tunnel dielectric layer, a multi-layer charge trapping layer, and a blocking dielectric layer disposed between the gate structure and the channel. The multi-layer charge trapping layer includes a first dielectric layer disposed abutting a second dielectric layer and an anti-tunneling layer disposed between the first and second dielectric layers. The anti-tunneling layer includes an oxide layer. The first dielectric layer includes oxygen-rich nitride and the second dielectric layer includes oxygen-lean nitride."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory transistor with multiple charge storing layers and a high work function gate electrode","description":"An example memory device includes a channel positioned between and electrically connecting a first diffusion region and a second diffusion region, and a tunnel dielectric layer, a multi-layer charge t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009401","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009401","citation_suggestion":"Patentable. \"Memory transistor with multiple charge storing layers and a high work function gate electrode\" (US-12009401). https://patentable.app/patents/US-12009401","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009401","json":"https://patentable.app/api/llm-context/US-12009401","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:14:30.612Z"}