{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009412","patent":{"patent_number":"US-12009412","title":"Bipolar transistors","assignee":null,"inventors":[],"filing_date":"2021-12-13T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: a base region composed of a semiconductor on insulator material; an emitter region above the base region; and a collector region under the base region and within a cavity of a buried insulator layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Bipolar transistors","description":"The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: a base region composed of a semiconductor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009412","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009412","citation_suggestion":"Patentable. \"Bipolar transistors\" (US-12009412). https://patentable.app/patents/US-12009412","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009412","json":"https://patentable.app/api/llm-context/US-12009412","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:40:00.422Z"}