{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009420","patent":{"patent_number":"US-12009420","title":"Semiconductor device, and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2023-09-14T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor device includes a semiconductor layer having a first face with a trench formed thereon and a second face opposite to the first face, a gate electrode, and a gate insulating layer. The semiconductor layer includes a first n-type semiconductor layer, a second n-type semiconductor layer, a p-type semiconductor layer, and an n-type semiconductor region. The trench is formed to penetrate through the p-type semiconductor layer and to reach the second n-type semiconductor layer. The p-type semiconductor layer includes an extended portion extending to a position closer to the second face of the semiconductor layer than the trench is. Such structure allows suppressing dielectric breakdown in the gate insulating layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device, and method for manufacturing the same","description":"A semiconductor device includes a semiconductor layer having a first face with a trench formed thereon and a second face opposite to the first face, a gate electrode, and a gate insulating layer. The ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009420","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009420","citation_suggestion":"Patentable. \"Semiconductor device, and method for manufacturing the same\" (US-12009420). https://patentable.app/patents/US-12009420","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009420","json":"https://patentable.app/api/llm-context/US-12009420","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:40:29.193Z"}