{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009433","patent":{"patent_number":"US-12009433","title":"Multi-dielectric gate stack for crystalline thin film transistors","assignee":null,"inventors":[],"filing_date":"2018-06-06T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"Embodiments disclosed herein include thin film transistors and methods of forming such thin film transistors. In an embodiment, the thin film transistor may comprise a substrate, a gate electrode over the substrate, and a gate dielectric stack over the gate electrode. In an embodiment, the gate dielectric stack may comprise a plurality of layers. In an embodiment, the plurality of layers may comprise an amorphous layer. In an embodiment, the thin film transistor may also comprise a semiconductor layer over the gate dielectric. In an embodiment, the semiconductor layer is a crystalline semiconductor layer. In an embodiment, the thin film transistor may also comprise a source electrode and a drain electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-dielectric gate stack for crystalline thin film transistors","description":"Embodiments disclosed herein include thin film transistors and methods of forming such thin film transistors. In an embodiment, the thin film transistor may comprise a substrate, a gate electrode over","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009433","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009433","citation_suggestion":"Patentable. \"Multi-dielectric gate stack for crystalline thin film transistors\" (US-12009433). https://patentable.app/patents/US-12009433","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009433","json":"https://patentable.app/api/llm-context/US-12009433","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:45:22.209Z"}