{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009435","patent":{"patent_number":"US-12009435","title":"Integrated nanosheet field effect transistors and floating gate memory cells","assignee":null,"inventors":[],"filing_date":"2021-09-13T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L","B82Y"],"num_claims":19,"abstract":"A semiconductor device including a nanosheet field effect transistor (FET) comprising a thin gate oxide layer and a floating gate memory cell comprising a tunneling oxide, a floating gate, and a blocking oxide layer over a fin FET device. The device fabricated by forming a nanosheet stack and fin structures, forming tunneling oxide and floating gate layers over the nanosheet stack and fin structures, forming dummy gate structures over the nanosheet stack and fin structures, removing the dummy gate structures, forming a blocking oxide layer over the floating gate, and forming replacement metal gates."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated nanosheet field effect transistors and floating gate memory cells","description":"A semiconductor device including a nanosheet field effect transistor (FET) comprising a thin gate oxide layer and a floating gate memory cell comprising a tunneling oxide, a floating gate, and a block","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009435","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009435","citation_suggestion":"Patentable. \"Integrated nanosheet field effect transistors and floating gate memory cells\" (US-12009435). https://patentable.app/patents/US-12009435","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009435","json":"https://patentable.app/api/llm-context/US-12009435","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:32:58.431Z"}