{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009436","patent":{"patent_number":"US-12009436","title":"Memory cells and integrated assemblies having charge-trapping-material with trap-enhancing-additive","assignee":null,"inventors":[],"filing_date":"2023-01-08T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":24,"abstract":"Some embodiments include a memory cell having charge-trapping-material between a semiconductor channel material and a gating region. The charge-trapping-material includes silicon, nitrogen and trap-enhancing-additive. The trap-enhancing-additive includes one or more of carbon, phosphorus, boron and metal. Some embodiments include an integrated assembly having a stack of alternating first and second levels. The first levels include conductive structures and the second levels are insulative. Channel-material-pillars extend through the stack. Charge-trapping-regions are along the channel-material-pillars and are between the channel-material-pillars and the conductive structures. The charge-trapping-regions include a charge-trapping-material which contains silicon, nitrogen and trap-enhancing-additive. The trap-enhancing-additive includes one or more of carbon, phosphorus, boron and metal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory cells and integrated assemblies having charge-trapping-material with trap-enhancing-additive","description":"Some embodiments include a memory cell having charge-trapping-material between a semiconductor channel material and a gating region. The charge-trapping-material includes silicon, nitrogen and trap-en","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009436","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009436","citation_suggestion":"Patentable. \"Memory cells and integrated assemblies having charge-trapping-material with trap-enhancing-additive\" (US-12009436). https://patentable.app/patents/US-12009436","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009436","json":"https://patentable.app/api/llm-context/US-12009436","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:22:17.676Z"}