{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12009437","patent":{"patent_number":"US-12009437","title":"Method for manufacturing a semiconductor structure having group III-V device on group IV substrate and contacts with liner stacks","assignee":null,"inventors":[],"filing_date":"2022-10-31T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. A blanket dielectric layer is situated over the patterned group III-V device. Contact holes in the blanket dielectric layer are situated over the patterned group III-V device. A liner stack having at least one metal liner is situated in each contact hole. Filler metals are situated over each liner stack and fill the contact holes. The patterned group III-V device can be optically and/or electrically connected to group IV devices in the group IV substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a semiconductor structure having group III-V device on group IV substrate and contacts with liner stacks","description":"A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. A blanket dielectric layer is situated over the patterned group III-V device. Co","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12009437","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12009437","citation_suggestion":"Patentable. \"Method for manufacturing a semiconductor structure having group III-V device on group IV substrate and contacts with liner stacks\" (US-12009437). https://patentable.app/patents/US-12009437","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12009437","json":"https://patentable.app/api/llm-context/US-12009437","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:37:48.019Z"}