{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12010443","patent":{"patent_number":"US-12010443","title":"Systems and methods for selectively modifying gating rate in single photon avalanche diodes","assignee":null,"inventors":[],"filing_date":"2021-10-19T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H04N","H04N","H04N","H04N","H04N","H04N"],"num_claims":17,"abstract":"A system for selectively modifying gating rate in a single photon avalanche diode (SPAD) is configurable to access first frame metadata associated with a first image frame. The first image frame is captured by performing a first plurality of gate operations to configure the SPAD array to enable photon detection over a frame capture time period. The first plurality of gate operations is performed at a first gating rate such that the first plurality of gate operations comprises a first quantity of gate operations performed over the frame capture time period. The system is further configurable to define a second gating rate based on the first frame metadata and capture a second image frame by performing a second plurality of gate operations to configure the SPAD array to enable photon detection at the second gating rate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Systems and methods for selectively modifying gating rate in single photon avalanche diodes","description":"A system for selectively modifying gating rate in a single photon avalanche diode (SPAD) is configurable to access first frame metadata associated with a first image frame. The first image frame is ca","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12010443","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12010443","citation_suggestion":"Patentable. \"Systems and methods for selectively modifying gating rate in single photon avalanche diodes\" (US-12010443). https://patentable.app/patents/US-12010443","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12010443","json":"https://patentable.app/api/llm-context/US-12010443","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T20:29:55.889Z"}