{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12010833","patent":{"patent_number":"US-12010833","title":"Method and structure for reduce OTP cell area and leakage","assignee":null,"inventors":[],"filing_date":"2023-07-17T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["G06F","G06F","G11C","G11C","H01L","H01L","H01L"],"num_claims":20,"abstract":"A memory device includes a first memory cell having a first polysilicon line associated with a first read word line and intersecting a first active region and a second active region, and a second polysilicon line and a first CPODE associated with a first program word line, the second polysilicon line intersecting the first active region and the first CPODE intersecting the second active region. The memory device also includes a second memory cell adjacent to the first memory cell, the second memory cell having a third polysilicon line associated with a second read word line and intersecting the first active region and the second active region, and a fourth polysilicon line and a second CPODE associated with a second program word line, the fourth polysilicon line intersecting the second active region and the second CPODE intersecting the first active region to form a cross-arrangement of CPODE."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and structure for reduce OTP cell area and leakage","description":"A memory device includes a first memory cell having a first polysilicon line associated with a first read word line and intersecting a first active region and a second active region, and a second poly","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12010833","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12010833","citation_suggestion":"Patentable. \"Method and structure for reduce OTP cell area and leakage\" (US-12010833). https://patentable.app/patents/US-12010833","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12010833","json":"https://patentable.app/api/llm-context/US-12010833","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:37:19.873Z"}