{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12010849","patent":{"patent_number":"US-12010849","title":"Semiconductor device having word line separation layer","assignee":null,"inventors":[],"filing_date":"2022-09-23T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a peripheral circuit structure; a lower stack disposed on the peripheral circuit structure and an upper stack disposed in the lower stack including a plurality of lower insulating layers and a plurality of lower word lines alternately stacked with the lower insulating layers; a plurality of channel structures extending through the lower stack and the upper stack in the cell array area; a pair of separation insulating layers extending vertically through the lower stack and the upper stack and extending in a horizontal direction, the pair of separation insulating layers being spaced apart from each other in a vertical direction; and a word line separation layer disposed at an upper portion of the lower stack and crossing the pair of separation insulating layers when viewed in a plan view, the word line separation layer extending vertically through at least one of the lower word lines."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having word line separation layer","description":"A semiconductor device includes a peripheral circuit structure; a lower stack disposed on the peripheral circuit structure and an upper stack disposed in the lower stack including a plurality of lower","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12010849","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12010849","citation_suggestion":"Patentable. \"Semiconductor device having word line separation layer\" (US-12010849). https://patentable.app/patents/US-12010849","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12010849","json":"https://patentable.app/api/llm-context/US-12010849","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:09:40.584Z"}