{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12010854","patent":{"patent_number":"US-12010854","title":"Multi-level hydrogen barrier layers for memory applications and methods of fabrication","assignee":null,"inventors":[],"filing_date":"2021-12-16T00:00:00.000Z","publication_date":"2024-06-11T00:00:00.000Z","cpc_codes":["G11C","H01L","H01L","H01L","H01L","G11C"],"num_claims":20,"abstract":"A device includes, in a first region, a first conductive interconnect, an electrode structure on the first conductive interconnect, where the electrode structure includes a first conductive hydrogen barrier layer and a first conductive fill material. A memory device including a ferroelectric material or a paraelectric material is on the electrode structure. A second dielectric includes an amorphous, greater than 90% film density hydrogen barrier material laterally surrounds the memory device. A via electrode including a second conductive hydrogen barrier material is on at least a portion of the memory device. A second region includes a conductive interconnect structure embedded within a less than 90% film density material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-level hydrogen barrier layers for memory applications and methods of fabrication","description":"A device includes, in a first region, a first conductive interconnect, an electrode structure on the first conductive interconnect, where the electrode structure includes a first conductive hydrogen b","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12010854","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12010854","citation_suggestion":"Patentable. \"Multi-level hydrogen barrier layers for memory applications and methods of fabrication\" (US-12010854). https://patentable.app/patents/US-12010854","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12010854","json":"https://patentable.app/api/llm-context/US-12010854","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:02:08.487Z"}