{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8460989","patent":{"patent_number":"US-8460989","title":"Niobium and vanadium organometallic precursors for thin film deposition","assignee":null,"inventors":[],"filing_date":"2009-10-06T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"Disclosed are methods for forming a metal-containing layer on a substrate. A vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt2)2; (Cp)V(=NtBu)(NMe2)2; (Cp)V(=NtBu)(NEtMe)2; (Cp)V(═NiPr)(NEt2)2; (Cp)V(═NiPr)(NMe2)2; (Cp)V(═NiPr)(NEtMe)2; (Cp)V(═NC5H11)(NEt2)2; (Cp)V(═NC5H11)(NMe2)2; (Cp)V(═NC5H11)(NEtMe)2; (Cp)Nb(=NtBu)(NEt2)2; (Cp)Nb(=NtBu)(NMe2)2; (Cp)Nb(=NtBu)(NEtMe)2; (Cp)Nb(═NiPr)(NEt2)2; (Cp)Nb(═NiPr)(NMe2)2; (Cp)Nb(═NiPr)(NEtMe)2; (Cp)Nb(═NC5H11)(NEt2)2; (Cp)Nb(═NC5H11)(NMe2)2; and (Cp)Nb(═NC5H11)(NEtMe)2 is provided. At least one reaction gas selected from the group consisting of ozone and water is provided. The vapor and the reaction gas react with the substrate according to a deposition process to form the metal-containing layer on at least one surface of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Niobium and vanadium organometallic precursors for thin film deposition","description":"Disclosed are methods for forming a metal-containing layer on a substrate. A vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt2)2; (Cp)V(=NtBu)(NM","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8460989","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8460989","citation_suggestion":"Patentable. \"Niobium and vanadium organometallic precursors for thin film deposition\" (US-8460989). https://patentable.app/patents/US-8460989","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8460989","json":"https://patentable.app/api/llm-context/US-8460989","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:57:05.845Z"}