{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8461026","patent":{"patent_number":"US-8461026","title":"Compound semiconductor lamination, method for manufacturing the same, and semiconductor device","assignee":null,"inventors":[],"filing_date":"2008-03-21T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"The present invention relates to a compound semiconductor lamination that enables an InSb film to be formed on an Si substrate and enables development of applications to magnetic sensors, such as Hall elements, magneto-resistance elements, etc., optical devices, such as infrared sensors, etc., and electronic devices, such as transistors, etc., to be provided industrially, and a method for manufacturing the compound semiconductor lamination. An active layer, which is a compound semiconductor that does not contain As, is directly formed on an Si substrate. As is present at an interface of the active layer and a single crystal layer of the Si substrate. The compound semiconductor contains at least nitrogen. The compound semiconductor is a single crystal thin film. The Si substrate is a bulk single crystal substrate or a thin film substrate with an uppermost layer being Si."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Compound semiconductor lamination, method for manufacturing the same, and semiconductor device","description":"The present invention relates to a compound semiconductor lamination that enables an InSb film to be formed on an Si substrate and enables development of applications to magnetic sensors, such as Hall","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8461026","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8461026","citation_suggestion":"Patentable. \"Compound semiconductor lamination, method for manufacturing the same, and semiconductor device\" (US-8461026). https://patentable.app/patents/US-8461026","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8461026","json":"https://patentable.app/api/llm-context/US-8461026","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:24:19.762Z"}