{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8461034","patent":{"patent_number":"US-8461034","title":"Localized implant into active region for enhanced stress","assignee":null,"inventors":[],"filing_date":"2010-10-20T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"Methods for enhancing strain in an integrated circuit are provided. Embodiments of the invention include using a localized implant into an active region prior to a gate etch. In another embodiment, source/drain regions adjacent to the gates are recessed to allow the strain to expand to full potential. New source/drain regions are allowed to grow back to maximize stress in the active region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Localized implant into active region for enhanced stress","description":"Methods for enhancing strain in an integrated circuit are provided. Embodiments of the invention include using a localized implant into an active region prior to a gate etch. In another embodiment, so","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8461034","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8461034","citation_suggestion":"Patentable. \"Localized implant into active region for enhanced stress\" (US-8461034). https://patentable.app/patents/US-8461034","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8461034","json":"https://patentable.app/api/llm-context/US-8461034","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:44:43.112Z"}