{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8461046","patent":{"patent_number":"US-8461046","title":"Process for producing a metallization level and a via level and corresponding integrated circuit","assignee":null,"inventors":[],"filing_date":"2011-07-20T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A process for producing an upper metallization level and a via level connecting this upper metallization level to a lower metallization level includes: producing an insulating region on the lower metallization level; producing a hard mask on the insulating region (4, 5) defining the position of the via and metallic line of the upper metallization level; etching the insulating region through the hard mask so as to form a cavity; cleaning the cavity (which forms an undercut at the interface between the hard mask and the insulating region); and completely filling the cavity. The step of completely filling includes at least partially filling the cavity with copper and plugging the undercut. The undercut is plugged by sputtering a plugging material and forming an overlying doped copper layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Process for producing a metallization level and a via level and corresponding integrated circuit","description":"A process for producing an upper metallization level and a via level connecting this upper metallization level to a lower metallization level includes: producing an insulating region on the lower meta","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8461046","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8461046","citation_suggestion":"Patentable. \"Process for producing a metallization level and a via level and corresponding integrated circuit\" (US-8461046). https://patentable.app/patents/US-8461046","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8461046","json":"https://patentable.app/api/llm-context/US-8461046","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:37:08.047Z"}