{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8461563","patent":{"patent_number":"US-8461563","title":"Resistance change memory","assignee":null,"inventors":[],"filing_date":"2011-09-07T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"According to one embodiment, a resistance change memory includes a memory cell unit. The memory cell unit is configured to stack a resistance change element and a diode element having non-ohmic properties, and the diode element is configured to stack in order to a semiconductor layer having a first conductivity type, a semiconductor layer having a second conductivity type, and a semiconductor layer having the first conductivity type from the first interconnect layer side. An area density of dopant impurities in the semiconductor layer having the second conductivity type is larger than a sum total of area densities of dopant impurities in the two semiconductor layers having the first conductivity type, and smaller than double an area density of an electric flux number associated with a threshold electric field of an interband tunneling current of a material includes the semiconductor layer having the second conductivity type."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistance change memory","description":"According to one embodiment, a resistance change memory includes a memory cell unit. The memory cell unit is configured to stack a resistance change element and a diode element having non-ohmic proper","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8461563","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8461563","citation_suggestion":"Patentable. \"Resistance change memory\" (US-8461563). https://patentable.app/patents/US-8461563","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8461563","json":"https://patentable.app/api/llm-context/US-8461563","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:35:44.140Z"}