{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8461564","patent":{"patent_number":"US-8461564","title":"Memory devices having an embedded resistance memory with metal-oxygen compound","assignee":null,"inventors":[],"filing_date":"2010-08-12T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["B82Y","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":13,"abstract":"Memory devices based on tungsten-oxide memory regions are described, along with methods for manufacturing and methods for programming such devices. The tungsten-oxide memory region can be formed by oxidation of tungsten material using a non-critical mask, or even no mask at all in some embodiments. A memory device described herein includes a bottom electrode and a memory element on the bottom electrode. The memory element comprises at least one tungsten-oxygen compound and is programmable to at least two resistance states. A top electrode comprising a barrier material is on the memory element, the barrier material preventing movement of metal-ions from the top electrode into the memory element."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory devices having an embedded resistance memory with metal-oxygen compound","description":"Memory devices based on tungsten-oxide memory regions are described, along with methods for manufacturing and methods for programming such devices. The tungsten-oxide memory region can be formed by ox","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8461564","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8461564","citation_suggestion":"Patentable. \"Memory devices having an embedded resistance memory with metal-oxygen compound\" (US-8461564). https://patentable.app/patents/US-8461564","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8461564","json":"https://patentable.app/api/llm-context/US-8461564","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T20:33:19.262Z"}