{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8461568","patent":{"patent_number":"US-8461568","title":"Re-emitting semiconductor construction with enhanced extraction efficiency","assignee":null,"inventors":[],"filing_date":"2010-04-30T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"A stack of semiconductor layers forms a re-emitting semiconductor construction (RSC). The stack includes an active region that converts light at a first wavelength to light at a second wavelength, the active region including at least one potential well. The stack also includes an inactive region extending from an outer surface of the stack to the active region. Depressions are formed in the stack that extend from the outer surface into the inactive region. An average depression depth is at least 50% of a thickness of the inactive region or at least 50% of a nearest potential well distance. The depressions may have at least a 40% packing density in plan view. The depressions may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Re-emitting semiconductor construction with enhanced extraction efficiency","description":"A stack of semiconductor layers forms a re-emitting semiconductor construction (RSC). The stack includes an active region that converts light at a first wavelength to light at a second wavelength, the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8461568","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8461568","citation_suggestion":"Patentable. \"Re-emitting semiconductor construction with enhanced extraction efficiency\" (US-8461568). https://patentable.app/patents/US-8461568","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8461568","json":"https://patentable.app/api/llm-context/US-8461568","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:45:27.108Z"}