{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8461636","patent":{"patent_number":"US-8461636","title":"Ferroic sensor having tini-film field-effect transistor and ferroic layer applied to substrate","assignee":null,"inventors":[],"filing_date":"2007-01-25T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":5,"abstract":"A ferroic component is described, comprising a ferroic layer (10) arranged between two electrodes (12,13), a thin-film field-effect transistor (4) whose gate electrode (3) forms one of the two electrodes (12, 13) of the ferroic layer (10) which is joined to the gate electrode (3) via an intermediate layer (11) acting as a bonding agent, and a substrate that is used as a support. In order to obtain a flexible component it is proposed that the thin-film field-effect transistor (4) on the one hand and the ferroic layer (10) which consists of an internally charged cellular polymer on the other hand are applied to the substrate which is arranged as a flexible plastic film (1), optionally by interposing an insulating layer (2) therebetween."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ferroic sensor having tini-film field-effect transistor and ferroic layer applied to substrate","description":"A ferroic component is described, comprising a ferroic layer (10) arranged between two electrodes (12,13), a thin-film field-effect transistor (4) whose gate electrode (3) forms one of the two electro","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8461636","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8461636","citation_suggestion":"Patentable. \"Ferroic sensor having tini-film field-effect transistor and ferroic layer applied to substrate\" (US-8461636). https://patentable.app/patents/US-8461636","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8461636","json":"https://patentable.app/api/llm-context/US-8461636","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:37:46.726Z"}