{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8461638","patent":{"patent_number":"US-8461638","title":"Non-volatile semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2011-03-28T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":11,"abstract":"A non-volatile semiconductor memory device includes: a charge accumulation layer (CAL) on a substrate; a memory gate formed onto the substrate through the CAL; a first side gate formed through a first insulating film on a first side of the memory gate; a second side gate formed through a second insulating film on a second side opposite to the first side; a first impurity implantation region (IIR1) in the substrate adjacent the first side gate; a second impurity implantation region (IIR2) formed in the substrate on a side of the second side gate; and a channel region between IIR1 and IIR2. The channel region includes a first region corresponding to a boundary between the CAL and the substrate; a select side region between the first region and IIR1; and an assist side region between the first region and IIR2. The select side region is longer than the assist side region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile semiconductor memory device","description":"A non-volatile semiconductor memory device includes: a charge accumulation layer (CAL) on a substrate; a memory gate formed onto the substrate through the CAL; a first side gate formed through a first","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8461638","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8461638","citation_suggestion":"Patentable. \"Non-volatile semiconductor memory device\" (US-8461638). https://patentable.app/patents/US-8461638","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8461638","json":"https://patentable.app/api/llm-context/US-8461638","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:25:08.453Z"}