{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8461645","patent":{"patent_number":"US-8461645","title":"Power semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-03-16T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":23,"abstract":"A semiconductor device includes a vertical power semiconductor chip including a semiconductor layer. A first terminal is at a first side of the semiconductor layer and a second terminal is at a second side of the semiconductor layer opposite the first side along a first direction. A drift zone is within the semiconductor layer between the first terminal and the second terminal. The drift zone has, in a central part, a compressive stress of at least 100 MPa along a second direction perpendicular to the first direction. The central part extends from 40% to 60% of an overall extension of the drift zone along the first direction and into a depth of the semiconductor layer of at least 10 μm with respect to at least one of the first side and the second side of the semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Power semiconductor device","description":"A semiconductor device includes a vertical power semiconductor chip including a semiconductor layer. A first terminal is at a first side of the semiconductor layer and a second terminal is at a second","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8461645","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8461645","citation_suggestion":"Patentable. \"Power semiconductor device\" (US-8461645). https://patentable.app/patents/US-8461645","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8461645","json":"https://patentable.app/api/llm-context/US-8461645","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:46:02.571Z"}