{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8461652","patent":{"patent_number":"US-8461652","title":"Semiconductor device having an n-channel MOS transistor, a p-channel MOS transistor and a contracting film","assignee":null,"inventors":[],"filing_date":"2009-09-28T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":7,"abstract":"In a second direction, in a plan view, an n-channel MOS transistor and an expanding film are adjacent. Therefore, the n-channel MOS transistor receives a positive stress in the direction in which a channel length is extended from the expanding film. As a result, a positive tensile strain in an electron moving direction is generated in a channel of the n-channel MOS transistor. On the other hand, in the second direction, in a plan view, a p-channel MOS transistor and the expanding film are shifted from each other. Therefore, the p-channel MOS transistor receives a positive stress in the direction in which a channel length is narrowed from the expanding film. As a result, a positive compressive strain in a hole moving direction is generated in a channel of the p-channel MOS transistor. Thus, both on-currents of the n-channel MOS transistor and the p-channel MOS transistor can be improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having an n-channel MOS transistor, a p-channel MOS transistor and a contracting film","description":"In a second direction, in a plan view, an n-channel MOS transistor and an expanding film are adjacent. Therefore, the n-channel MOS transistor receives a positive stress in the direction in which a ch","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8461652","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8461652","citation_suggestion":"Patentable. \"Semiconductor device having an n-channel MOS transistor, a p-channel MOS transistor and a contracting film\" (US-8461652). https://patentable.app/patents/US-8461652","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8461652","json":"https://patentable.app/api/llm-context/US-8461652","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:50:50.439Z"}