{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8461682","patent":{"patent_number":"US-8461682","title":"Ruthenium silicide diffusion barrier layers and methods of forming same","assignee":null,"inventors":[],"filing_date":"2009-07-13T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":23,"abstract":"A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. A diffusion barrier layer is formed over at least a portion of the surface. The diffusion barrier layer is formed of RuSix, where x is in the range of about 0.01 to about 10. The barrier layer may be formed by depositing RuSix by chemical vapor deposition or the barrier layer may be formed by forming a layer of ruthenium relative to a silicon containing region and performing an anneal to form RuSix from the layer of ruthenium and the silicon containing region. Capacitor electrodes, interconnects or other structures may be formed with such a diffusion barrier layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ruthenium silicide diffusion barrier layers and methods of forming same","description":"A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. A diffusion barrier layer is formed over at least a portion of the surface. The dif","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8461682","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8461682","citation_suggestion":"Patentable. \"Ruthenium silicide diffusion barrier layers and methods of forming same\" (US-8461682). https://patentable.app/patents/US-8461682","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8461682","json":"https://patentable.app/api/llm-context/US-8461682","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:35:37.052Z"}