{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8462539","patent":{"patent_number":"US-8462539","title":"Resistive memory element and use thereof","assignee":null,"inventors":[],"filing_date":"2011-08-18T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":11,"abstract":"A resistive memory element that includes an element body and at least a pair of electrodes opposed to each other with at least a portion of the element body interposed therebetween. The element body is made of an oxide semiconductor which has a composition represented by the general formula: (Ba1-xSrx)Ti1-yMyO3 (wherein M is at least one from among Mn, Fe, and Co; 0≦x≦1.0; and 0.005≦y≦0.05). The first electrode of the pair of electrodes is made of a material which can form a Schottky barrier which can develop a rectifying property and resistance change characteristics in an interface region between the first electrode and the element body. The second electrode is made of a material which provides a more ohmic junction to the element body as compared with the first electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistive memory element and use thereof","description":"A resistive memory element that includes an element body and at least a pair of electrodes opposed to each other with at least a portion of the element body interposed therebetween. The element body i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8462539","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8462539","citation_suggestion":"Patentable. \"Resistive memory element and use thereof\" (US-8462539). https://patentable.app/patents/US-8462539","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8462539","json":"https://patentable.app/api/llm-context/US-8462539","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:01:22.145Z"}