{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8462556","patent":{"patent_number":"US-8462556","title":"Method for operating a high density multi-level cell non-volatile flash memory device","assignee":null,"inventors":[],"filing_date":"2011-12-15T00:00:00.000Z","publication_date":"2013-06-11T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":9,"abstract":"A localized trapping multi-level memory cell operating method includes the following steps. First, a localized trapping memory cell with the initial threshold voltage of approximately 2.5V is provided. Next, an erasing operation is performed to obtain a negative threshold level having uniform charge distribution along the channel region. Taking into account the over-erasure issue in the erasing operation, a programming operation is performed to precisely adjust the threshold voltage to a predetermined level of −2V to −1V. Then, with this negative voltage as a new initial state, a corresponding programming operation is performed and electrons are locally injected into the storage layer. By controlling the quantity of injected electrons, the MLC storage is achieved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for operating a high density multi-level cell non-volatile flash memory device","description":"A localized trapping multi-level memory cell operating method includes the following steps. First, a localized trapping memory cell with the initial threshold voltage of approximately 2.5V is provided","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8462556","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8462556","citation_suggestion":"Patentable. \"Method for operating a high density multi-level cell non-volatile flash memory device\" (US-8462556). https://patentable.app/patents/US-8462556","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8462556","json":"https://patentable.app/api/llm-context/US-8462556","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:04:20.344Z"}