{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8465589","patent":{"patent_number":"US-8465589","title":"Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors","assignee":null,"inventors":[],"filing_date":"2010-02-05T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":8,"abstract":"A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors","description":"A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8465589","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8465589","citation_suggestion":"Patentable. \"Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors\" (US-8465589). https://patentable.app/patents/US-8465589","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8465589","json":"https://patentable.app/api/llm-context/US-8465589","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:21:31.476Z"}