{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8465997","patent":{"patent_number":"US-8465997","title":"Manufacturing method of group III nitride semiconductor","assignee":null,"inventors":[],"filing_date":"2010-02-26T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A manufacturing method of a group III nitride semiconductor comprising: preparing a substrate including a buffer layer; forming a first layer on the buffer layer from a group III nitride semiconductor by MOCVD while doping an anti-surfactant, wherein a thickness of the first layer is equal to or thinner than 2 μm; forming a second layer on the first layer from a group III nitride semiconductor by MOCVD while doping at least one of surfactant and an anti-surfactant; and controlling a crystalline quality and a surface flatness of the second layer by adjusting an amount of the anti-surfactant and the surfactant doped during the formation of the second layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of group III nitride semiconductor","description":"A manufacturing method of a group III nitride semiconductor comprising: preparing a substrate including a buffer layer; forming a first layer on the buffer layer from a group III nitride semiconductor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8465997","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8465997","citation_suggestion":"Patentable. \"Manufacturing method of group III nitride semiconductor\" (US-8465997). https://patentable.app/patents/US-8465997","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8465997","json":"https://patentable.app/api/llm-context/US-8465997","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:37:25.385Z"}