{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466021","patent":{"patent_number":"US-8466021","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2012-07-25T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a se","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466021","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466021","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-8466021). https://patentable.app/patents/US-8466021","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466021","json":"https://patentable.app/api/llm-context/US-8466021","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:52:06.628Z"}