{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466048","patent":{"patent_number":"US-8466048","title":"Selective recrystallization of semiconductor","assignee":null,"inventors":[],"filing_date":"2010-03-09T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["G02F","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":2,"abstract":"Disclosed is a semiconductor device which includes a substrate 11, a thin film transistor 20 having a first semiconductor layer 16A that is supported by the substrate 11, a thin film diode 30 having a second semiconductor layer 16B that is supported by the substrate 11, and a metal layer 12 that is formed between the substrate 11 and the second semiconductor layer 16B. The first semiconductor layer 16A is a laterally grown crystalline semiconductor film, and the second semiconductor layer 16B is a crystalline semiconductor film that contains fine crystal grains. The average surface roughness of the second semiconductor layer 16B is higher than the average surface roughness of the first semiconductor layer 16A. Consequently, the optical sensitivity of the TFD is improved and the reliability of the TFT is improved, as compared with those in the conventional semiconductor devices."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selective recrystallization of semiconductor","description":"Disclosed is a semiconductor device which includes a substrate 11, a thin film transistor 20 having a first semiconductor layer 16A that is supported by the substrate 11, a thin film diode 30 having a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466048","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466048","citation_suggestion":"Patentable. \"Selective recrystallization of semiconductor\" (US-8466048). https://patentable.app/patents/US-8466048","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466048","json":"https://patentable.app/api/llm-context/US-8466048","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:09:52.638Z"}