{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466049","patent":{"patent_number":"US-8466049","title":"Semiconductor device producing method with selective epitaxial growth","assignee":null,"inventors":[],"filing_date":"2006-07-25T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device producing method with selective epitaxial growth","description":"Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466049","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466049","citation_suggestion":"Patentable. \"Semiconductor device producing method with selective epitaxial growth\" (US-8466049). https://patentable.app/patents/US-8466049","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466049","json":"https://patentable.app/api/llm-context/US-8466049","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:35:01.378Z"}