{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466050","patent":{"patent_number":"US-8466050","title":"Method for dual energy implantation for ultra-shallow junction formation of MOS devices","assignee":null,"inventors":[],"filing_date":"2010-07-02T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":16,"abstract":"A method for forming a lightly doped drain (LDD) region in a semiconductor substrate. The method includes generating an ion beam of a selected species, and accelerating the ion beam, wherein the accelerated ion beam includes a first accelerated portion and a second accelerated portion. The method further includes deflecting the accelerating ion beam, wherein the first and second accelerated portions are concurrently deflected into a first path trajectory having a first deflected angle and second path trajectory having a second deflected angle. In an embodiment, the first and second path trajectories travel in the same direction, which is perpendicular to the surface region of the semiconductor wafer, and the first deflected angle is greater than the second deflected angle. In an embodiment, the selected species may include an n-type ion comprising phosphorous (P), arsenic (As), or antimony (Sb)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for dual energy implantation for ultra-shallow junction formation of MOS devices","description":"A method for forming a lightly doped drain (LDD) region in a semiconductor substrate. The method includes generating an ion beam of a selected species, and accelerating the ion beam, wherein the accel","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466050","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466050","citation_suggestion":"Patentable. \"Method for dual energy implantation for ultra-shallow junction formation of MOS devices\" (US-8466050). https://patentable.app/patents/US-8466050","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466050","json":"https://patentable.app/api/llm-context/US-8466050","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T12:45:33.586Z"}