{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466053","patent":{"patent_number":"US-8466053","title":"Method of manufacturing semiconductor device, and semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-03-29T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A gate insulating film is formed on a substrate. Next, a gate electrode film is formed on the gate insulating film. A mask film is formed on a portion of the gate electrode film. The gate electrode film is selectively removed by etching using the mask film as a mask. A gate sidewall film is formed so as to be in contact with the lateral surfaces of the mask film and the gate electrode film. The mask film is formed of a laminated film in which at least a first film, a second film and a third film are laminated in this order. The second film has a higher etching selectivity ratio than that of the third film with respect to the gate sidewall film. The third film has a higher etching selectivity ratio than that of the second film with respect to the gate electrode film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device, and semiconductor device","description":"A gate insulating film is formed on a substrate. Next, a gate electrode film is formed on the gate insulating film. A mask film is formed on a portion of the gate electrode film. The gate electrode fi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466053","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466053","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device, and semiconductor device\" (US-8466053). https://patentable.app/patents/US-8466053","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466053","json":"https://patentable.app/api/llm-context/US-8466053","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:54:59.696Z"}