{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466056","patent":{"patent_number":"US-8466056","title":"Method of forming metal interconnect structures in ultra low-k dielectrics","assignee":null,"inventors":[],"filing_date":"2010-11-18T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A metal interconnect structure in ultra low-k dielectrics is described having a capped interconnect layer; an interconnect feature with a contact via and a contact line formed in a dielectric layer, where the via is partially embedded into the interconnect layer; and a thin film formed on the dielectric layer and separating the dielectric layer from the contact line. A method of fabricating the interconnect structure is also described and includes forming a first dielectric on a capped interconnect element; forming a thin film over the first dielectric; forming a second dielectric on the thin film; forming a via opening on the second dielectric, the thin film and extending into the first dielectric; forming a line trench on a portion of the second dielectric; and filling the via opening and the line trench with a conductive material for forming a contact via and a contact line, where the contact via is partially embedded in the interconnect element."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming metal interconnect structures in ultra low-k dielectrics","description":"A metal interconnect structure in ultra low-k dielectrics is described having a capped interconnect layer; an interconnect feature with a contact via and a contact line formed in a dielectric layer, w","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466056","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466056","citation_suggestion":"Patentable. \"Method of forming metal interconnect structures in ultra low-k dielectrics\" (US-8466056). https://patentable.app/patents/US-8466056","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466056","json":"https://patentable.app/api/llm-context/US-8466056","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:37:27.332Z"}