{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466062","patent":{"patent_number":"US-8466062","title":"TSV backside processing using copper damascene interconnect technology","assignee":null,"inventors":[],"filing_date":"2011-11-02T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":32,"abstract":"Generally, the subject matter disclosed herein relates to interconnect structures used for making electrical connections between semiconductor chips in a stacked or 3D chip configuration, and methods for forming the same. One illustrative method disclosed herein includes forming a conductive via element in a semiconductor substrate, wherein the conductive via element is formed from a front side of the semiconductor substrate so as to initially extend a partial distance through the semiconductor substrate. The illustrative method also includes forming a via opening in a back side of the semiconductor substrate to expose a surface of the conductive via element, and filling the via opening with a layer of conductive contact material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"TSV backside processing using copper damascene interconnect technology","description":"Generally, the subject matter disclosed herein relates to interconnect structures used for making electrical connections between semiconductor chips in a stacked or 3D chip configuration, and methods ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466062","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466062","citation_suggestion":"Patentable. \"TSV backside processing using copper damascene interconnect technology\" (US-8466062). https://patentable.app/patents/US-8466062","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466062","json":"https://patentable.app/api/llm-context/US-8466062","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:16:32.921Z"}